Document Details

Document Type : Article In Journal 
Document Title :
Ambipolar small molecular semiconductor-based heterojunction diode
Ambipolar small molecular semiconductor-based heterojunction diode
 
Subject : physics 
Document Language : English 
Abstract : A heterojunction diode based on an ambipolar organic semiconductor 2,8-bis(5-(2-octyldodecyl)thien-2- yl)indeno[1,2-b]fluorene-6,12-dione (20D-TIFDKT) was fabricated on p-Si using a drop-casting technique. The current-voltage and capacitance-voltage characteristics of Al/20D-TIFDKT/p-Si/Al devices with aluminized contacts were investigated under dark and 100 mW/cm(2) illumination intensity. The result is a novel interface-state controlled diode device that is shown to be rectifying. In the forward, bias it has a current that depends on the illumination intensity at constant bias, showing potential application in low-power solar cell application. In the reverse bias, it has a response that depends on the illumination intensity regardless of the applied reverse bias. This suggests a potential use as a sensor in photoconductive applications. Between 0 and 0.7 V forward bias, the ideality factor, series resistance and barrier height average at 2.35, 67.6 k Omega and 0.842 eV, respectively, regardless of illumination 
ISSN : 0379-6779 
Journal Name : SYNTHETIC METALS 
Volume : 221 
Issue Number : 1 
Publishing Year : 1437 AH
2016 AD
 
Article Type : Article 
Added Date : Tuesday, August 8, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
r.o OcayaOcaya, r.o InvestigatorDoctorate 
Mehmet OzdemirOzdemir, Mehmet ResearcherDoctorate 
Resul OzdemirOzdemir, Resul ResearcherDoctorate 
A.A Al-Ghamdi,Al-Ghamdi, A.A ResearcherDoctorate 
Hakan UstaUsta, Hakan ResearcherDoctorate 
W. A. FarooqFarooq, W. A ResearcherDoctorate 
F YakuphanogluYakuphanoglu, F Researcher fyhan@hotmail.com

Files

File NameTypeDescription
 42516.pdf pdf 

Back To Researches Page