Document Details Document Type : Article In Journal  Document Title : AC Conductivity Properties of GaTe Layer Crystals AC Conductivity Properties of GaTe Layer Crystals   Subject : physics  Document Language : English  Abstract : Bulk crystals of GaTe were grown using the modified Bridgman techniques. The phase formation was confirmed by XRD-studies. The lattice parameters, crystallite size and nnicrostrain of the GaTe crystals were determined. The crystallize size suggests that GaTe film is a nanomaterial. The dependence of ac conductivity on temperature and frequency was studied on the ranges 295 k to 545 k and 200 Hz to 76 KHz respectively. AC conductivity measurements suggest that the conduction mechanism of the GaTe sample is controlled via a thermally activated process from different localized states in the gap or its tails.  ISSN : 1555-130X  Journal Name : JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS  Volume : 9  Issue Number : 5  Publishing Year : 1435 AH 2014 AD  Article Type : Article  Added Date : Sunday, July 30, 2017  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email R. H. Alo Rainy Rainy, R. H. Alo Investigator Doctorate   A.A Ebnalwaled Ebnalwaled, A.A Researcher Doctorate   Files File Name Type Description  42333.pdf pdf   Back To Researches Page