Document Details

Document Type : Article In Journal 
Document Title :
Dot density effect by quantity of deposited material in InP/AlGaInP structures
Dot density effect by quantity of deposited material in InP/AlGaInP structures
 
Subject : Physics 
Document Language : English 
Abstract : Optical absorption spectra have been measured by the segmented contact method on InP quantum-dot (QD) laser structures for different quantities of deposited material, equivalent to 2, 2.5, and 3 mono-layers, and growth temperatures of 690 °C and 730 °C. The spectra suggest inhomogeneous distributions of large and small groups of dots and a group of very large dots in structures grown at 690 °C. The absorption peak energies do not change significantly with the amount of deposited material so we interpret changes in the magnitude of absorption as being due to changes in the density of dots. Using calculated values for the optical cross sections, we have estimated the variation of the number of dots in each group with monolayers of deposited material. The structures grown at 690 °C are unusual in that the density of small dots decreases with increasing material deposited whereas the density of very large dots increases superlinearly, suggesting the small dots agglomerate to form the very large dots, which may in fact be due to quantum mechanical coupling of closely spaced small dots. 
ISSN : 1041-1135 
Journal Name : IEEE Photonics Technology Letters 
Volume : 23 
Issue Number : 16 
Publishing Year : 1432 AH
2011 AD 
Article Type : Article 
Added Date : Tuesday, May 1, 2012 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
محمد سعد الغامديAl-Ghamdi, Mohammed SaadResearcherDoctoratemsalghamdi@kau.edu.sa
P M SmowtonSmowton, P MResearcherDoctorate 
P BloodBlood, P ResearcherDoctorate 
A B KrysaKrysa, A BResearcherDoctorate 

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