Document Details Document Type : Thesis  Document Title : Application of Jahn-Teller effect for V2+ ION in Gap Semiconductors تطبيق لأثر جان لأيون v2 في أشباه الموصلات Gap   Subject : Physics  Document Language : Arabic  Abstract : The object of this work to describe theoretical studies which have been carried out on the role of substitutional V2+ acting as a deep level impurity in GaP. Thennally detected Electron Paramagnetic Resonance (TD-EPR) measurements canied out in Clermont-Fen-and, France, are used as a basis for the modeling. A spin Hamiltonian with s = is shown to describe the V2+ ion. A computer software are used in a FORTRAN program to determine the values of the parameters of this Hamiltonian by minimizing the difference between the theoretical predicted energy and the experimental energy. Then the theoretical spectra obtained from these calculations are compared with their experimental counterpart. The model shows a good agreement between the theoretical and the experimental spectra  Supervisor : Dr. Mohammed Riyadh Arafah  Thesis Type : Master Thesis  Publishing Year : 1420 AH 1999 AD  Co-Supervisor : Dr. Mohammad Saeed Alahmadi  Added Date : Wednesday, June 11, 2008  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email خديجة سعيد محمد علي Mohammed Ali, Khadija Saeed Researcher Master   Files File Name Type Description  23817.pdf pdf المستخلص  23818.pdf pdf Abstract Back To Researches Page